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| BUP 307 IGBT Preliminary data * Low forward voltage drop * High switching speed * Low tail current * Latch-up free * Avalanche rated Pin 1 G Pin 2 C Pin 3 E Type BUP 307 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage VCE IC Package TO-218 AB Ordering Code Q67078-A4201-A2 1200V 35A Symbol Values 1200 1200 Unit V VCE VCGR VGE IC RGE = 20 k Gate-emitter voltage DC collector current 20 A 35 23 TC = 25 C TC = 90 C Pulsed collector current, tp = 1 ms ICpuls 70 46 TC = 25 C TC = 90 C Avalanche energy, single pulse EAS 23 mJ IC = 15 A, VCC = 50 V, RGE = 25 L = 200 H, Tj = 25 C Power dissipation Ptot 310 W -55 ... + 150 -55 ... + 150 C TC = 25 C Chip or operating temperature Storage temperature Tj Tstg Semiconductor Group 1 Dec-07-1995 BUP 307 Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance IGBT thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - RthJC 0.4 K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.8 3.8 4 1 0.1 6.5 3.3 4.3 4.5 V VGE = VCE, IC = 0.1 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 15 A, Tj = 25 C VGE = 15 V, IC = 15 A, Tj = 125 C VGE = 15 V, IC = 15 A, Tj = 150 C Zero gate voltage collector current ICES 250 1000 A VCE = 1200 V, VGE = 0 V, Tj = 25 C VCE = 1000 V, VGE = 0 V, Tj = 125 C Gate-emitter leakage current IGES 100 nA VGE = 20 V, VCE = 0 V AC Characteristics Transconductance gfs 5.5 8 2000 160 65 - S pF 2700 240 100 VCE = 20 V, IC = 15 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group 2 Dec-07-1995 BUP 307 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time td(on) Values typ. max. Unit ns 30 45 VCC = 600 V, VGE = 15 V, IC = 15 A RGon = 33 Rise time - tr 22 35 VCC = 600 V, VGE = 15 V, IC = 15 A RGon = 33 Turn-off delay time td(off) 230 310 VCC = 600 V, VGE = -15 V, IC = 15 A RGoff = 33 Fall time tf 20 28 mWs 1.7 - VCC = 600 V, VGE = -15 V, IC = 15 A RGoff = 33 Total turn-off loss energy Eoff VCC = 600 V, VGE = -15 V, IC = 15 A RGoff = 33 Semiconductor Group 3 Dec-07-1995 BUP 307 Power dissipation Ptot = (TC) parameter: Tj 150 C 320 Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C 36 A W Ptot 240 IC 28 24 200 20 160 16 120 12 80 8 4 0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 C 160 40 0 0 TC TC Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 2 t = 3.5s p Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 IGBT A 10 s K/W IC 100 s ZthJC 10 1 10 -1 1 ms D = 0.50 10 ms 0.20 10 -2 10 0 0.10 0.05 single pulse 0.02 0.01 DC 10 -1 0 10 10 -3 -5 10 10 1 10 2 10 3 V 10 -4 10 -3 10 -2 10 -1 s 10 0 VCE tp Semiconductor Group 4 Dec-07-1995 BUP 307 Typ. output characteristics Typ. transfer characteristics IC = f(VCE) parameter: tp = 80 s, Tj = 125 C IC = f (VGE) parameter: tP = 80 s, VCE = 20 V, Tj = 25 C Typ. saturation characteristics Typ. saturation characteristics VCE(sat) = f (VGE) parameter: Tj = 25 C VCE(sat) = f (VGE) parameter: Tj = 125 C Semiconductor Group 5 Dec-07-1995 BUP 307 Typ. gate charge VGE = (QGate) parameter: IC puls = 20 A 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz VGE 16 14 12 10 8 6 4 2 0 0 20 40 60 80 400 V 800 V 100 120 140 nC 180 Q Gate Typ. switching time t = f(RG) inductive load, with freewheel diode BYP 102 parameter: Tj = 125 C, VCE = 600 V, VGE = 15 V, IC = 10 A Semiconductor Group 6 Dec-07-1995 BUP 307 Package Outlines Dimensions in mm Weight: 8 g Semiconductor Group 7 Dec-07-1995 |
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